Our Technologies
Crystal Growth Systems.
Single crystals are essential to modern technology -used in semiconductors, defence laser systems, IR optics, and advanced applications like quantum and space. India currently imports nearly all of these materials, making indigenous crystal growth strategically critical.
The Czochralski (CZ) process produces large, defect-free single crystals by pulling a rotating seed from a high-purity melt, ideal for semiconductors and photonics.
The Bridgman process enables directional solidification in a multizone furnace, ensuring precise composition control for IR-grade and scintillator crystals.
Raana designs and manufactures both systems entirely in-house -from hot zones and RF power systems to PLC/SCADA automation -enabling domestic production of Silicon, Germanium, Nd:YAG, and Lithium Niobate crystals.
Crystals Grown Using Our Systems
Czochralski Crystal Growth System - 4″ Ingot Capability
The Czochralski (CZ) crystal growth system is fully developed, installed, and currently in operation at our facility. The system is actively utilised for the growth of high-quality single crystal ingots under controlled process conditions. It is capable of producing single crystal ingots with a maximum diameter of 4 inches (100 mm) and has been successfully used for the growth of Silicon (Si), Germanium (Ge), Nd:YAG, and Lithium Niobate (LiNbO₃). The system provides precise control over thermal conditions, pulling mechanisms, rotational parameters, and atmosphere - ensuring stable growth conditions, high repeatability, and consistent crystal quality.
Czochralski Crystal Growth System - 6″ Ingot (Under Development)
The next-generation Czochralski (CZ) crystal growth system is currently under development, aimed at enabling the growth of large-diameter single crystal ingots up to 6 inches (150 mm). This system is being engineered to meet the requirements of advanced crystal growth processes for Silicon (Si), widely used in semiconductor applications. The design focuses on enhanced thermal stability, precise control of pulling and rotation mechanisms, and optimised hot zone performance - supporting uniform crystal growth, improved yield, and scalability to larger diameters. Upon completion, this system will provide a robust platform for producing 6-inch class single crystal ingots, contributing to domestic semiconductor manufacturing capabilities.
Bridgman Multizone Furnace
The Bridgman Multizone Furnace features independently controlled heating zones that create a precise, stable temperature gradient along the growth axis. The melt is fully enclosed within the crucible - eliminating evaporation losses and contamination - making it ideal for scintillator crystals, halides, and oxide materials used in nuclear instrumentation, radiation dosimetry, and defence sensor systems.
Horizontal Zone Refining System
The Horizontal Zone Refining system purifies crystal raw materials by repeatedly passing a narrow molten zone along a solid ingot. Impurities preferentially segregate into the liquid phase and are swept to one end, progressively increasing the purity of the remaining material. This technique is essential for achieving semiconductor-grade and detector-grade purity levels (6N+ to 9N+) required for crystal growth of Silicon, Germanium, and other electronic materials.
Need a crystal growth system?
We supply indigenously built CZ, Bridgman, and Float Zone systems for your facility.